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Infineon Technologies AGIPB100N04S4H2ATMA1MOSFETs
Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| ±20 | |
| 4 | |
| 100 | |
| 2.4@10V | |
| 70@10V | |
| 70 | |
| 5520@25V | |
| 115000 | |
| 21 | |
| 13 | |
| 19 | |
| 18 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 2.1@10V|2.4@10V | |
| 400 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.4 mm |
| Verpackungsbreite | 9.25 mm |
| Verpackungslänge | 10 mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | D2PAK |
| 3 | |
| Leitungsform | Gull-wing |
Amplify electronic signals and switch between them with the help of Infineon Technologies' IPB100N04S4H2ATMA1 power MOSFET. Its maximum power dissipation is 115000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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