Infineon Technologies AGIPB120N04S401ATMA1MOSFETs
Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| ±20 | |
| 4 | |
| 120 | |
| 1.5@10V | |
| 135@10V | |
| 135 | |
| 10770@25V | |
| 188000 | |
| 36 | |
| 16 | |
| 41 | |
| 34 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 1.35@10V|1.7@10V | |
| 480 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.4 mm |
| Verpackungsbreite | 9.25 mm |
| Verpackungslänge | 10 mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | D2PAK |
| 3 | |
| Leitungsform | Gull-wing |
Make an effective common source amplifier using this IPB120N04S401ATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 188000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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