Infineon Technologies AGIPB160N04S3H2ATMA1MOSFETs
Trans MOSFET N-CH 40V 160A 7-Pin(6+Tab) D2PAK T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quint Source | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| ±20 | |
| 4 | |
| 160 | |
| 2.1@10V | |
| 110@10V | |
| 110 | |
| 7400@25V | |
| 214000 | |
| 17 | |
| 16 | |
| 46 | |
| 30 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 1.6@10V | |
| 640 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.4 |
| Verpackungsbreite | 9.25 |
| Verpackungslänge | 10 |
| Leiterplatte geändert | 6 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | D2PAK |
| 7 | |
| Leitungsform | Gull-wing |
Amplify electronic signals and switch between them with the help of Infineon Technologies' IPB160N04S3H2ATMA1 power MOSFET. Its maximum power dissipation is 214000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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