Infineon Technologies AGIPB180N03S4LH0ATMA1MOSFETs
Trans MOSFET N-CH 30V 180A 7-Pin(6+Tab) D2PAK T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quint Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±16 | |
| 2.2 | |
| 180 | |
| 0.95@10V | |
| 230@10V | |
| 230 | |
| 17500@25V | |
| 250000 | |
| 25 | |
| 7 | |
| 60 | |
| 9 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 0.73@10V|0.95@4.5V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.4 mm |
| Verpackungsbreite | 9.25 mm |
| Verpackungslänge | 10 mm |
| Leiterplatte geändert | 6 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | D2PAK |
| 7 | |
| Leitungsform | Gull-wing |
This IPB180N03S4LH0ATMA1 power MOSFET from Infineon Technologies can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 250000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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