Infineon Technologies AGIPB60R280C6ATMA1MOSFETs
Trans MOSFET N-CH 600V 13.8A 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| 20 | |
| 3.5 | |
| 13.8 | |
| 280@10V | |
| 43@10V | |
| 43 | |
| 950@100V | |
| 104000 | |
| 12 | |
| 11 | |
| 100 | |
| 13 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 250@10V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.4 mm |
| Verpackungsbreite | 9.25 mm |
| Verpackungslänge | 10 mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | D2PAK |
| 3 | |
| Leitungsform | Gull-wing |
Make an effective common source amplifier using this IPB60R280C6ATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 104000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes coolmos technology.
| EDA / CAD Models |
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