Infineon Technologies AGIPB60R380C6ATMA1MOSFETs
Trans MOSFET N-CH 600V 10.6A 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| IPB60R380C6ATMA1 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| 20 | |
| 3.5 | |
| 10.6 | |
| 100 | |
| 1 | |
| 380@10V | |
| 32@10V | |
| 32 | |
| 700@100V | |
| 83000 | |
| 9 | |
| 10 | |
| 110 | |
| 15 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 340@10V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.57(Max) mm |
| Verpackungsbreite | 9.45(Max) mm |
| Verpackungslänge | 10.31(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | D2PAK |
| 3 | |
| Leitungsform | Gull-wing |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the IPB60R380C6ATMA1 power MOSFET, developed by Infineon Technologies. Its maximum power dissipation is 83000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes coolmos c6 technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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