Infineon Technologies AGIPB90N06S404ATMA2MOSFETs
Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 4 | |
| 90 | |
| 3.7@10V | |
| 99@10V | |
| 99 | |
| 7980@25V | |
| 150000 | |
| 5 | |
| 70 | |
| 40 | |
| 30 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| 3@10V|3.3@10V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.4 mm |
| Verpackungsbreite | 9.25 mm |
| Verpackungslänge | 10 mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | D2PAK |
| 3 | |
| Leitungsform | Gull-wing |
Create an effective common drain amplifier using this IPB90N06S404ATMA2 power MOSFET from Infineon Technologies. Its maximum power dissipation is 150000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos technology.
| EDA / CAD Models |
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