Infineon Technologies AGIPD025N06NATMA1MOSFETs
Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| 20 | |
| 3.3 | |
| 90 | |
| 100 | |
| 1 | |
| 2.5@10V | |
| 24@10V | |
| 24 | |
| 5200@30V | |
| 3000 | |
| 12 | |
| 20 | |
| 34 | |
| 16 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 2.1@10V|2.7@6V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.3 mm |
| Verpackungsbreite | 6.22 mm |
| Verpackungslänge | 6.5 mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 |
Make an effective common source amplifier using this IPD025N06NATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 3000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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