Infineon Technologies AGIPD048N06L3GBTMA1MOSFETs
Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 90 | |
| 4.8@10V | |
| 37@4.5V | |
| 6300@30V | |
| 115000 | |
| 12 | |
| 5 | |
| 56 | |
| 11 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.3 mm |
| Verpackungsbreite | 6.22 mm |
| Verpackungslänge | 6.5 mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 |
Compared to traditional transistors, IPD048N06L3GBTMA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 115000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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