Infineon Technologies AGIPD50N06S4L12ATMA2MOSFETs
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±16 | |
| 2.2 | |
| 50 | |
| 12@10V | |
| 30@10V | |
| 30 | |
| 2220@25V | |
| 50000 | |
| 5 | |
| 2 | |
| 25 | |
| 6 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| 9.6@10V|14.6@4.5V | |
| 200 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.3 mm |
| Verpackungsbreite | 6.22 mm |
| Verpackungslänge | 6.5 mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 |
Use Infineon Technologies' IPD50N06S4L12ATMA2 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 50000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos technology.
| EDA / CAD Models |
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