Infineon Technologies AGIPD50N10S3L16ATMA1MOSFETs
Trans MOSFET N-CH 100V 50A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 2.4 | |
| -55 to 175 | |
| 50 | |
| 100 | |
| 0.1 | |
| 15@10V | |
| 49@10V | |
| 49 | |
| 8 | |
| 9 | |
| 178 | |
| 3215@25V | |
| 63@25V | |
| 1.2 | |
| 730 | |
| 100000 | |
| 5 | |
| 5 | |
| 29 | |
| 10 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| 12.5@10V|15.3@4.5V | |
| 200 | |
| 62 | |
| 1 | |
| 3.7 | |
| 97 | |
| 1.2 | |
| 1.7 | |
| 20 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.3 mm |
| Verpackungsbreite | 6.22 mm |
| Verpackungslänge | 6.5 mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 | |
| Leitungsform | Gull-wing |
Compared to traditional transistors, IPD50N10S3L16ATMA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 100000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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