Infineon Technologies AGIPD60N10S4L12ATMA1MOSFETs
Trans MOSFET N-CH 100V 60A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±16 | |
| 2.1 | |
| 60 | |
| 100 | |
| 1 | |
| 12@10V | |
| 38@10V | |
| 38 | |
| 2440@25V | |
| 94000 | |
| 21 | |
| 3 | |
| 20 | |
| 4 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| 9.8@10V|12.3@4.5V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.41(Max) mm |
| Verpackungsbreite | 6.22(Max) mm |
| Verpackungslänge | 6.73(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 | |
| Leitungsform | Gull-wing |
This IPD60N10S4L12ATMA1 power MOSFET from Infineon Technologies can not only be used for amplifying electronic signals but also for switching between electronic signals.
| EDA / CAD Models |
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