Infineon Technologies AGIPI024N06N3GXKSA1MOSFETs
Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-262 Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 4 | |
| 120 | |
| 2.4@10V | |
| 206@10V | |
| 206 | |
| 17000@30V | |
| 250000 | |
| 24 | |
| 80 | |
| 79 | |
| 41 | |
| -55 | |
| 175 | |
| Tube | |
| 1.8@10V|2.1@10V | |
| 480 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.25 |
| Verpackungsbreite | 4.4 |
| Verpackungslänge | 10 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-262 |
| 3 | |
| Leitungsform | Through Hole |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the IPI024N06N3GXKSA1 power MOSFET, developed by Infineon Technologies. Its maximum power dissipation is 250000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos technology.
| EDA / CAD Models |
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