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Infineon Technologies AGIPI60R099CPXKSA1MOSFETs
Trans MOSFET N-CH 600V 31A 3-Pin(3+Tab) TO-262 Tube
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.29.00.95 | |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±20 | |
| 3.5 | |
| 31 | |
| 99@10V | |
| 60@10V | |
| 60 | |
| 2800@100V | |
| 255000 | |
| 5 | |
| 5 | |
| 60 | |
| 10 | |
| -55 | |
| 150 | |
| Tube | |
| 90@10V | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.25 mm |
| Verpackungsbreite | 4.4 mm |
| Verpackungslänge | 10 mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-262 |
| 3 | |
| Leitungsform | Through Hole |
As an alternative to traditional transistors, the IPI60R099CPXKSA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 255000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes coolmos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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