Infineon Technologies AGIPL65R650C6SATMA1MOSFETs
Trans MOSFET N-CH 650V 6.7A 8-Pin Thin-PAK EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| IPL65R650C6SATMA1 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| 20 | |
| 3.5 | |
| 6.7 | |
| 100 | |
| 1 | |
| 650@10V | |
| 21@10V | |
| 21 | |
| 440@100V | |
| 56800 | |
| 13 | |
| 9 | |
| 80 | |
| 12 | |
| -40 | |
| 150 | |
| Tape and Reel | |
| 590@10V | |
| Befestigung | Surface Mount |
| Verpackungsbreite | 6 |
| Verpackungslänge | 5 |
| Leiterplatte geändert | 8 |
| Lieferantenverpackung | Thin-PAK EP |
| 8 |
Make an effective common source amplifier using this IPL65R650C6SATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 56800 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C. This device is made with coolmos c6 technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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