Infineon Technologies AGIPP023N10N5AKSA1MOSFETs
Trans MOSFET N-CH 100V 120A 3-Pin(3+Tab) TO-220 Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| 20 | |
| 3.8 | |
| 120 | |
| 100 | |
| 1 | |
| 2.3@10V | |
| 168@10V | |
| 168 | |
| 12000@50V | |
| 375000 | |
| 29 | |
| 26 | |
| 77 | |
| 33 | |
| -55 | |
| 175 | |
| Tube | |
| 2.3@6V|2@10V | |
| 480 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.45(Max) mm |
| Verpackungsbreite | 4.57(Max) mm |
| Verpackungslänge | 10.36(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220 |
| 3 | |
| Leitungsform | Through Hole |
This IPP023N10N5AKSA1 power MOSFET from Infineon Technologies can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 375000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes optimos 5 technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Playbook: Smarte Drohnen-Systeme
Downloaden Sie das Playbook für praxisnahe Tools und Strategien zur Entwicklung agiler, effizienter und modularer Drohnensysteme.