Infineon Technologies AGIPP057N08N3GXKSA1MOSFETs
Trans MOSFET N-CH 80V 80A 3-Pin(3+Tab) TO-220 Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 80 | |
| ±20 | |
| 3.5 | |
| 80 | |
| 5.7@10V | |
| 52@10V | |
| 52 | |
| 3570@40V | |
| 150000 | |
| 10 | |
| 66 | |
| 38 | |
| 18 | |
| -55 | |
| 175 | |
| Tube | |
| 6.3@6V|4.9@10V | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.45(Max) mm |
| Verpackungsbreite | 4.57(Max) mm |
| Verpackungslänge | 10.36(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220 |
| 3 |
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the IPP057N08N3GXKSA1 power MOSFET. Its maximum power dissipation is 150000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with optimos 3 technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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