Infineon Technologies AGIPP093N06N3GXKSA1MOSFETs
Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-220 Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 4 | |
| 50 | |
| 9.3@10V | |
| 36@10V | |
| 36 | |
| 2900@30V | |
| 71000 | |
| 5 | |
| 40 | |
| 20 | |
| 15 | |
| -55 | |
| 175 | |
| Tube | |
| 7.7@10V|8@10V | |
| 200 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.45(Max) |
| Verpackungsbreite | 4.57(Max) |
| Verpackungslänge | 10.36(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220 |
| 3 |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies' IPP093N06N3GXKSA1 power MOSFET can provide a solution. Its maximum power dissipation is 71000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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