Infineon Technologies AGIPP110N20N3GXKSA1MOSFETs
Trans MOSFET N-CH 200V 88A 3-Pin(3+Tab) TO-220 Tube
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 200 | |
| ±20 | |
| 4 | |
| 88 | |
| 11@10V | |
| 65@10V | |
| 65 | |
| 5340@100V | |
| 300000 | |
| 11 | |
| 26 | |
| 41 | |
| 18 | |
| -55 | |
| 175 | |
| Tube | |
| 9.6@10V|9.9@10V | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.45(Max) mm |
| Verpackungsbreite | 4.57(Max) mm |
| Verpackungslänge | 10.36(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220 |
| 3 |
Compared to traditional transistors, IPP110N20N3GXKSA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 300000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology.
| EDA / CAD Models |
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