Infineon Technologies AGIPP50R280CEXKSA1MOSFETs
Trans MOSFET N-CH 500V 13A 3-Pin(3+Tab) TO-220 Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| 20 | |
| 3.5 | |
| 13 | |
| 100 | |
| 1 | |
| 280@13V | |
| 32.6@10V | |
| 32.6 | |
| 773@100V | |
| 92000 | |
| 7.6 | |
| 6.4 | |
| 40 | |
| 8 | |
| -55 | |
| 150 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.45(Max) mm |
| Verpackungsbreite | 4.57(Max) mm |
| Verpackungslänge | 10.36(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220 |
| 3 |
Make an effective common gate amplifier using this IPP50R280CEXKSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 92000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes coolmos technology.
| EDA / CAD Models |
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