Infineon Technologies AGIPP60R280P6XKSA1MOSFETs
Trans MOSFET N-CH 600V 13.8A 3-Pin(3+Tab) TO-220 Tube
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.29.00.55 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| 20 | |
| 4.5 | |
| 13.8 | |
| 100 | |
| 1 | |
| 280@10V | |
| 25.5@10V | |
| 25.5 | |
| 1190@100V | |
| 104000 | |
| 6 | |
| 6 | |
| 36 | |
| 12 | |
| -55 | |
| 150 | |
| Tube | |
| 252@10V | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.45(Max) mm |
| Verpackungsbreite | 4.57(Max) mm |
| Verpackungslänge | 10.36(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220 |
| 3 |
Create an effective common drain amplifier using this IPP60R280P6XKSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 104000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with coolmos p6 technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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