Infineon Technologies AGIPP65R190CFDXKSA1MOSFETs
Trans MOSFET N-CH 650V 17.5A 3-Pin(3+Tab) TO-220 Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| IPP65R190CFDXKSA1 | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| 20 | |
| 4.5 | |
| -55 to 150 | |
| 17.5 | |
| 100 | |
| 1 | |
| 190@10V | |
| 68@10V | |
| 68 | |
| 1850@100V | |
| 151000 | |
| 6.4 | |
| 8.4 | |
| 53.2 | |
| 12 | |
| -55 | |
| 150 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.45(Max) mm |
| Verpackungsbreite | 4.57(Max) mm |
| Verpackungslänge | 10.36(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220 |
| 3 |
If you need to either amplify or switch between signals in your design, then Infineon Technologies' IPP65R190CFDXKSA1 power MOSFET is for you. Its maximum power dissipation is 151000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This device is made with coolmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.