Infineon Technologies AGIPP65R225C7XKSA1MOSFETs
Trans MOSFET N-CH 650V 11A 3-Pin(3+Tab) TO-220 Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| 20 | |
| 4 | |
| 11 | |
| 100 | |
| 1 | |
| 225@10V | |
| 20@10V | |
| 20 | |
| 996@400V | |
| 63000 | |
| 10 | |
| 6 | |
| 48 | |
| 9 | |
| -55 | |
| 150 | |
| Tube | |
| 199@10V | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.25 mm |
| Verpackungsbreite | 4.4 mm |
| Verpackungslänge | 10 mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220 |
| 3 |
Compared to traditional transistors, IPP65R225C7XKSA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 63000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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