Infineon Technologies AGIPT007N06NATMA1MOSFETs
Trans MOSFET N-CH 60V 52A 9-Pin(8+Tab) HSOF T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Seven Source | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| 20 | |
| 3.3 | |
| -55 to 175 | |
| 52 | |
| 100 | |
| 1 | |
| 0.75@10V | |
| 216@10V | |
| 216 | |
| 39 | |
| 67 | |
| 144 | |
| 58 | |
| 16000@30V | |
| 229@30V | |
| 2.1 | |
| 3400 | |
| 375000 | |
| 22 | |
| 18 | |
| 76 | |
| 38 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 0.66@10V|0.85@6V | |
| 1200 | |
| 40 | |
| 0.87 | |
| 4.2 | |
| 87 | |
| 1 | |
| 2.8 | |
| 2.7 | |
| 20 | |
| 52 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.3 mm |
| Verpackungsbreite | 10.38 mm |
| Verpackungslänge | 9.9 mm |
| Leiterplatte geändert | 8 |
| Tab | Tab |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | HSOF |
| 9 | |
| Leitungsform | Flat |
Create an effective common drain amplifier using this IPT007N06NATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 375000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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