Infineon Technologies AGIPT020N10N3ATMA1MOSFETs
Trans MOSFET N-CH 100V 300A 9-Pin(8+Tab) HSOF T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Seven Source | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| 20 | |
| 3.5 | |
| 300 | |
| 100 | |
| 1 | |
| 2@10V | |
| 156@10V | |
| 156 | |
| 11200@50V | |
| 375000 | |
| 18 | |
| 58 | |
| 84 | |
| 34 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| 2.2@6V|1.7@10V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.3 |
| Verpackungsbreite | 10.38 |
| Verpackungslänge | 9.9 |
| Leiterplatte geändert | 8 |
| Tab | Tab |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | HSOF |
| 9 |
Make an effective common gate amplifier using this IPT020N10N3ATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 375000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
| EDA / CAD Models |
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