Infineon Technologies AGIPW60R070C6FKSA1MOSFETs
Trans MOSFET N-CH 600V 53A 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| 20 | |
| 3.5 | |
| 53 | |
| 70@10V | |
| 170@10V | |
| 170 | |
| 3800@100V | |
| 391000 | |
| 5 | |
| 12 | |
| 83 | |
| 16 | |
| -55 | |
| 150 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.1(Max) mm |
| Verpackungsbreite | 5.21(Max) mm |
| Verpackungslänge | 16.13(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
Amplify electronic signals and switch between them with the help of Infineon Technologies' IPW60R070C6FKSA1 power MOSFET. Its maximum power dissipation is 391000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes coolmos technology.
| EDA / CAD Models |
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