Infineon Technologies AGIPW60R099C6FKSA1MOSFETs
Trans MOSFET N-CH 600V 37.9A 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| NRND | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| 20 | |
| 3.5 | |
| 37.9 | |
| 99@10V | |
| 119@10V | |
| 119 | |
| 2660@100V | |
| 278000 | |
| 6 | |
| 12 | |
| 75 | |
| 15 | |
| -55 | |
| 150 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 20.9 |
| Verpackungsbreite | 5.03 |
| Verpackungslänge | 15.9 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
Create an effective common drain amplifier using this IPW60R099C6FKSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 278000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This device is made with coolmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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