Infineon Technologies AGIPW65R045C7FKSA1MOSFETs
Trans MOSFET N-CH 650V 46A 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| 20 | |
| 4 | |
| -55 to 150 | |
| 46 | |
| 100 | |
| 2 | |
| 45@10V | |
| 93@10V | |
| 93 | |
| 4340@400V | |
| 227000 | |
| 7 | |
| 14 | |
| 82 | |
| 20 | |
| -55 | |
| 150 | |
| Tube | |
| 40@10V | |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.1(Max) |
| Verpackungsbreite | 5.21(Max) |
| Verpackungslänge | 16.13(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
Make an effective common gate amplifier using this IPW65R045C7FKSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 227000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with coolmos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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