| Compliant with Exemption | |
| EAR99 | |
| Active | |
| IRF510PBF | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 4 | |
| -55 to 175 | |
| 5.6 | |
| 100 | |
| 25 | |
| 540@10V | |
| 8.3(Max)@10V | |
| 8.3(Max) | |
| 3.8(Max) | |
| 2.3(Max) | |
| 440 | |
| 180@25V | |
| 15@25V | |
| 2 | |
| 81 | |
| 43000 | |
| 9.4 | |
| 16 | |
| 15 | |
| 6.9 | |
| -55 | |
| 175 | |
| 20 | |
| 6.5 | |
| 100 | |
| 2.5 | |
| 20 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 8.89 |
| Verpackungsbreite | 4.45 |
| Verpackungslänge | 10.28 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 | |
| Leitungsform | Through Hole |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Vishay's IRF510PBF power MOSFET can provide a solution. Its maximum power dissipation is 43000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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