| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 200 | |
| ±20 | |
| 4 | |
| -55 to 150 | |
| 9 | |
| 100 | |
| 25 | |
| 400@10V | |
| 43(Max)@10V | |
| 43(Max) | |
| 23(Max) | |
| 7(Max) | |
| 1100 | |
| 800@25V | |
| 76@25V | |
| 2 | |
| 240 | |
| 3000 | |
| 20 | |
| 28 | |
| 39 | |
| 9.4 | |
| -55 | |
| 150 | |
| 3 | |
| 36 | |
| 40 | |
| 6 | |
| 170 | |
| 2 | |
| 20 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.45 |
| Verpackungsbreite | 9.02 |
| Verpackungslänge | 10.16 |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | D2PAK |
| 3 | |
| Leitungsform | Gull-wing |
Create an effective common drain amplifier using this IRF630SPBF power MOSFET from Vishay. Its maximum power dissipation is 3000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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