| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.10.00.80 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 200 | |
| ±20 | |
| 18 | |
| 180@10V | |
| 70(Max)@10V | |
| 70(Max) | |
| 1300@25V | |
| 3100 | |
| 36 | |
| 51 | |
| 45 | |
| 14 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.83(Max) mm |
| Verpackungsbreite | 9.65(Max) mm |
| Verpackungslänge | 10.67(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | D2PAK |
| 3 | |
| Leitungsform | Gull-wing |
Make an effective common source amplifier using this IRF640STRRPBF power MOSFET from Vishay. Its maximum power dissipation is 3100 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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