| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 400 | |
| ±20 | |
| 4 | |
| -55 to 150 | |
| 5.5 | |
| 100 | |
| 25 | |
| 1000@10V | |
| 38(Max)@10V | |
| 38(Max) | |
| 22(Max) | |
| 5.7(Max) | |
| 1800 | |
| 700@25V | |
| 64@25V | |
| 2 | |
| 170 | |
| 74000 | |
| 14 | |
| 15 | |
| 38 | |
| 10 | |
| -55 | |
| 150 | |
| 22 | |
| 270 | |
| 1.6 | |
| 0.6 | |
| 2.3 | |
| 20 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 8.79(Max) |
| Verpackungsbreite | 4.65(Max) |
| Verpackungslänge | 10.36(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 | |
| Leitungsform | Through Hole |
Create an effective common drain amplifier using this IRF730PBF power MOSFET from Vishay. Its maximum power dissipation is 74000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes HEXFET technology.
| EDA / CAD Models |
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