| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.10.00.80 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±30 | |
| 4 | |
| -55 to 150 | |
| 8 | |
| 100 | |
| 25 | |
| 850@10V | |
| 38(Max)@10V | |
| 38(Max) | |
| 18(Max) | |
| 9(Max) | |
| 2000 | |
| 1018@25V | |
| 8@25V | |
| 2 | |
| 155 | |
| 3100 | |
| 19 | |
| 23 | |
| 26 | |
| 11 | |
| -55 | |
| 150 | |
| 32 | |
| 40 | |
| 5.25 | |
| 422 | |
| 2 | |
| 0.7 | |
| 3.7 | |
| 30 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.45 |
| Verpackungsbreite | 9.02 |
| Verpackungslänge | 10.16 |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | D2PAK |
| 3 |
This IRF840ASPBF power MOSFET from Vishay can be used for amplification in your circuit. Its maximum power dissipation is 3100 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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