| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±20 | |
| 8 | |
| 850@10V | |
| 63(Max)@10V | |
| 63(Max) | |
| 1300@25V | |
| 3100 | |
| 20 | |
| 23 | |
| 49 | |
| 14 | |
| -55 | |
| 150 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.45 |
| Verpackungsbreite | 9.02 |
| Verpackungslänge | 10.16 |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | D2PAK |
| 3 |
Make an effective common gate amplifier using this IRF840SPBF power MOSFET from Vishay. Its maximum power dissipation is 3100 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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