| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 200 | |
| ±20 | |
| 4 | |
| -55 to 150 | |
| 1.8 | |
| 100 | |
| 100 | |
| 3000@10V | |
| 11(Max)@10V | |
| 11(Max) | |
| 4(Max) | |
| 7(Max) | |
| 1700 | |
| 170@25V | |
| 15@25V | |
| 2 | |
| 50 | |
| 20000 | |
| 8 | |
| 15 | |
| 10 | |
| 8 | |
| -55 | |
| 150 | |
| 20 | |
| 7 | |
| 9.9 | |
| 240 | |
| 5.8 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.14(Max) mm |
| Verpackungsbreite | 4.65(Max) mm |
| Verpackungslänge | 10.52(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 | |
| Leitungsform | Through Hole |
Use Vishay's IRF9610PBF power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 2000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode. This device is made with HEXFET technology.
| EDA / CAD Models |
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