| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 50 | |
| ±20 | |
| 4 | |
| 9.7 | |
| 280@10V | |
| 17@10V | |
| 17 | |
| 5.7 | |
| 4.1 | |
| 340 | |
| 480@25V | |
| 320 | |
| 40000 | |
| 25 | |
| 57 | |
| 12 | |
| 8.2 | |
| -55 | |
| 150 | |
| 200@10V | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.01(Max) mm |
| Verpackungsbreite | 4.7(Max) mm |
| Verpackungslänge | 10.41(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 | |
| Leitungsform | Through Hole |
Amplify electronic signals and switch between them with the help of Vishay's IRF9Z20PBF power MOSFET. Its maximum power dissipation is 40000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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