| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.10.00.80 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±20 | |
| 4 | |
| -55 to 175 | |
| 11 | |
| 100 | |
| 100 | |
| 280@10V | |
| 19(Max)@10V | |
| 19(Max) | |
| 11(Max) | |
| 5.4(Max) | |
| 320 | |
| 570@25V | |
| 65@25V | |
| 2 | |
| 360 | |
| 3700 | |
| 29 | |
| 68 | |
| 15 | |
| 13 | |
| -55 | |
| 175 | |
| 20 | |
| 44 | |
| 40 | |
| 7 | |
| 100 | |
| 6.3 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.45 |
| Verpackungsbreite | 9.02 |
| Verpackungslänge | 10.16 |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | D2PAK |
| 3 | |
| Leitungsform | Gull-wing |
As an alternative to traditional transistors, the IRF9Z24SPBF power MOSFET from Vishay can be used to both amplify and switch electronic signals. Its maximum power dissipation is 3700 mW. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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