| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.10.00.80 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 800 | |
| ±20 | |
| 4 | |
| -55 to 150 | |
| 4.1 | |
| 100 | |
| 100 | |
| 3000@10V | |
| 78(Max)@10V | |
| 78(Max) | |
| 45(Max) | |
| 9.6(Max) | |
| 1800 | |
| 1300@25V | |
| 190@25V | |
| 2 | |
| 310 | |
| 125000 | |
| 30 | |
| 33 | |
| 82 | |
| 12 | |
| -55 | |
| 150 | |
| 16 | |
| 6 | |
| 480 | |
| 1.8 | |
| 20 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 8.89 |
| Verpackungsbreite | 4.45 |
| Verpackungslänge | 10.28 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 | |
| Leitungsform | Through Hole |
Compared to traditional transistors, IRFBE30PBF power MOSFETs, developed by Vishay, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 125000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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