| Compliant | |
| EAR99 | |
| Active | |
| IRFBF30PBF | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| 0.3um | |
| Enhancement | |
| N | |
| 1 | |
| 900 | |
| ±20 | |
| 3.6 | |
| 3700@10V | |
| 78(Max)@10V | |
| 78(Max) | |
| 1200@25V | |
| 125000 | |
| 30 | |
| 25 | |
| 90 | |
| 14 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.01(Max) |
| Verpackungsbreite | 4.7(Max) |
| Verpackungslänge | 10.41(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 | |
| Leitungsform | Through Hole |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the IRFBF30PBF power MOSFET, developed by Vishay. Its maximum power dissipation is 125000 mW. This N channel MOSFET transistor operates in enhancement mode. This device utilizes HEXFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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