| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Drain | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 4 | |
| -55 to 175 | |
| 2.5 | |
| 100 | |
| 25 | |
| 100@10V | |
| 25(Max)@10V | |
| 25(Max) | |
| 11(Max) | |
| 5.8(Max) | |
| 290 | |
| 640@25V | |
| 79@25V | |
| 2 | |
| 360 | |
| 1300 | |
| 42 | |
| 58 | |
| 25 | |
| 13 | |
| -55 | |
| 175 | |
| 20 | |
| 20 | |
| 6.1 | |
| 80 | |
| 1.5 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 3.37(Max) |
| Verpackungsbreite | 6.29(Max) |
| Verpackungslänge | 5(Max) |
| Leiterplatte geändert | 4 |
| Standard-Verpackungsname | DIP |
| Lieferantenverpackung | HVMDIP |
| 4 | |
| Leitungsform | Through Hole |
Make an effective common gate amplifier using this IRFD024PBF power MOSFET from Vishay. Its maximum power dissipation is 1300 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
| EDA / CAD Models |
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