| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Drain | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 4 | |
| -55 to 175 | |
| 1.3 | |
| 100 | |
| 25 | |
| 270@10V | |
| 16(Max)@10V | |
| 16(Max) | |
| 7.7(Max) | |
| 4.4(Max) | |
| 650 | |
| 360@25V | |
| 34@25V | |
| 2 | |
| 150 | |
| 1300 | |
| 17 | |
| 27 | |
| 18 | |
| 6.8 | |
| -55 | |
| 175 | |
| 20 | |
| 10 | |
| 7.2 | |
| 130 | |
| 2.5 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 3.28 |
| Verpackungsbreite | 6.2 |
| Verpackungslänge | 4.9 |
| Leiterplatte geändert | 4 |
| Standard-Verpackungsname | DIP |
| Lieferantenverpackung | HVMDIP |
| 4 | |
| Leitungsform | Through Hole |
As an alternative to traditional transistors, the IRFD120PBF power MOSFET from Vishay can be used to both amplify and switch electronic signals. Its maximum power dissipation is 1300 mW. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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