| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Drain | |
| Enhancement | |
| N | |
| 1 | |
| 200 | |
| ±20 | |
| 0.8 | |
| 800@10V | |
| 14(Max)@10V | |
| 14(Max) | |
| 260@25V | |
| 1000 | |
| 13 | |
| 22 | |
| 19 | |
| 7.2 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 3.37(Max) mm |
| Verpackungsbreite | 6.29(Max) mm |
| Verpackungslänge | 5(Max) mm |
| Leiterplatte geändert | 4 |
| Standard-Verpackungsname | DIP |
| Lieferantenverpackung | HVMDIP |
| 4 | |
| Leitungsform | Through Hole |
Use Vishay's IRFD220PBF power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 1000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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