| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.10.00.80 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Drain | |
| Enhancement | |
| P | |
| 1 | |
| 200 | |
| ±20 | |
| 0.56 | |
| 1500@10V | |
| 15(Max)@10V | |
| 15(Max) | |
| 340@25V | |
| 1000 | |
| 19 | |
| 27 | |
| 7.3 | |
| 8.8 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 3.37(Max) |
| Verpackungsbreite | 6.29(Max) |
| Verpackungslänge | 5(Max) |
| Leiterplatte geändert | 4 |
| Standard-Verpackungsname | DIP |
| Lieferantenverpackung | HVMDIP |
| 4 | |
| Leitungsform | Through Hole |
If you need to either amplify or switch between signals in your design, then Vishay's IRFD9220PBF power MOSFET is for you. Its maximum power dissipation is 1000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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