| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 200 | |
| ±20 | |
| 9.8 | |
| 180@10V | |
| 70(Max)@10V | |
| 70(Max) | |
| 1300@25V | |
| 40000 | |
| 36 | |
| 51 | |
| 45 | |
| 14 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 16.12(Max) |
| Verpackungsbreite | 4.83(Max) |
| Verpackungslänge | 10.63(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220FP |
| 3 | |
| Leitungsform | Through Hole |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Vishay's IRFI640GPBF power MOSFET can provide a solution. Its maximum power dissipation is 40000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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