| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.10.00.80 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±20 | |
| 3.5 | |
| 1200@10V | |
| 60(Max)@10V | |
| 60(Max) | |
| 1300@25V | |
| 40000 | |
| 20 | |
| 18 | |
| 55 | |
| 13 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 16.12(Max) |
| Verpackungsbreite | 4.83(Max) |
| Verpackungslänge | 10.63(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220FP |
| 3 | |
| Leitungsform | Through Hole |
As an alternative to traditional transistors, the IRFIBC40GPBF power MOSFET from Vishay can be used to both amplify and switch electronic signals. Its maximum power dissipation is 40000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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