| Compliant | |
| EAR99 | |
| Active | |
| 8541.10.00.80 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 16 | |
| 400@10V | |
| 120(Max)@10V | |
| 120(Max) | |
| 3500@25V | |
| 280000 | |
| 38 | |
| 57 | |
| 43 | |
| 17 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 20.7(Max) |
| Verpackungsbreite | 5.31(Max) |
| Verpackungslänge | 15.87(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247AC |
| 3 | |
| Leitungsform | Through Hole |
Make an effective common source amplifier using this IRFPC60LCPBF power MOSFET from Vishay. Its maximum power dissipation is 280000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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