| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 50 | |
| ±20 | |
| 4 | |
| 5.3 | |
| 500 | |
| 250 | |
| 500@10V | |
| 6.1@10V | |
| 6.1 | |
| 3.9 | |
| 2 | |
| 220 | |
| 240@25V | |
| 160 | |
| 25000 | |
| 35 | |
| 47 | |
| 13 | |
| 6.1 | |
| -55 | |
| 150 | |
| 350@10V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.39(Max) mm |
| Verpackungsbreite | 6.22(Max) mm |
| Verpackungslänge | 6.73(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Vishay's IRFR9010PBF power MOSFET can provide a solution. Its maximum power dissipation is 25000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
KI-Systeme in der Medizin
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