| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 9.2 | |
| 750@10V | |
| 49(Max)@10V | |
| 49(Max) | |
| 1400@25V | |
| 170000 | |
| 22 | |
| 25 | |
| 30 | |
| 13 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.65(Max) |
| Verpackungsbreite | 4.83(Max) |
| Verpackungslänge | 10.67(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-262 |
| 3 | |
| Leitungsform | Through Hole |
This IRFSL9N60APBF power MOSFET from Vishay can be used for amplification in your circuit. Its maximum power dissipation is 170000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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