| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 400 | |
| ±20 | |
| 4 | |
| -55 to 150 | |
| 1.8 | |
| 100 | |
| 100 | |
| 7000@10V | |
| 13(Max)@10V | |
| 13(Max) | |
| 5(Max) | |
| 3.2(Max) | |
| 640 | |
| 270@25V | |
| 8@25V | |
| 2 | |
| 50 | |
| 50000 | |
| 24 | |
| 10 | |
| 25 | |
| 11 | |
| -55 | |
| 150 | |
| 20 | |
| 7.2 | |
| 50 | |
| 5.1 | |
| 170 | |
| 4 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 6.22(Max) |
| Verpackungsbreite | 2.39(Max) |
| Verpackungslänge | 6.73(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | IPAK |
| 3 | |
| Leitungsform | Through Hole |
This IRFU9310PBF power MOSFET from Vishay can be used for amplification in your circuit. Its maximum power dissipation is 50000 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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