| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.10.00.80 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 4 | |
| 10 | |
| 200@10V | |
| 11(Max)@10V | |
| 11(Max) | |
| 5.8(Max) | |
| 3.1(Max) | |
| 200 | |
| 300@25V | |
| 160 | |
| 3700 | |
| 19 | |
| 50 | |
| 13 | |
| 10 | |
| -55 | |
| 175 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.83(Max) mm |
| Verpackungsbreite | 9.65(Max) mm |
| Verpackungslänge | 10.41(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | D2PAK |
| 3 |
Make an effective common source amplifier using this IRFZ14SPBF power MOSFET from Vishay. Its maximum power dissipation is 3700 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
| EDA / CAD Models |
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